Semiconductor device including adhesive agent layer with embedded conductor bodies

ABSTRACT

A semiconductor integrated circuit is adhered to the substrate and includes semiconductor integrated circuit electrodes. A hardened adhesive agent layer is formed from an adhesive agent with gradable adhesiveness and has conductor bodies buried therein. The adhesive agent includes a (meth)acrylate copolymer having a weight-average molecular weight of not less than 30,000, an epoxy resin having a weight-average molecular weight of 100 to 10,000, a photopolymerizable low molecular compound and thermal activation latent epoxy resin curing agent. The conductor bodies are connected with the semiconductor integrated circuit electrodes, and the adhesive agent layer is aligned with the substrate so that the conductor bodies buried in the adhesive agent layer and the substrate electrodes are electrically connected.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a Rule 53(b) divisional application of U.S.application Ser. No. 10/107,176, filed Mar. 28, 2002, which in turn isrelated to and claims priority from Japanese application serial no.2001-099019, filed Mar. 30, 2001.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device bonded by aso-called flip-chip mounting method, a process for producing the same,and an adhesive sheet to be used for adhering a semiconductor chip or asemiconductor wafer and a substrate to produce the same.

2. Description of the Related Art

In recent years, in terms of a semiconductor integrated circuit (IC)getting more integrated and semiconductor device (IC package) gettingmore compact, etc., a flip-chip mounting method has come to be applied.The flip-chip mounting method is a kind of a wireless bonding methodincluding the steps of forming bumps made by soldering, etc. onelectrodes on a surface of the semiconductor chip, mounting thesemiconductor chip made to be upside down on a print substrate, ceramicsubstrate or other substrates, aligning the bumps with the electrodes onthe substrate, then, heating to fuse the bumps so that the electrodes ofthe semiconductor chip and the electrodes of the substrate are bonded.

In a semiconductor device made by the above flip-chip mounting method, aresin called an under filling material is generally provided between thesemiconductor chip and the substrate to prevent crack, etc. caused by adifference of coefficients of linear expansion between the semiconductorchip, the bumps and the substrate.

As the under filling material, a liquid epoxy resin composition obtainedby blending an epoxy resin, curing agent and inorganic filler isnormally used. The liquid epoxy resin composition is hardened afterbeing injected into a space between the semiconductor chip and thesubstrate.

Recently, rapid progress has been made along with higher integration ofa semiconductor integrated circuit, such as multi-electrodes, narrowerpitches between electrodes, and the semiconductor device gettingthinner, so spaces between the bumps are becoming extremely narrow and adistance between the semiconductor chip and the substrate is becomingextremely short. When the spaces between bumps become extremely narrowand the distance between the semiconductor chip and the substratebecomes extremely short as above, it becomes hard for the under fillingmaterial to get into the space between the semiconductor chip and thesubstrate (between the bumps) due to a flow resistance. Then, the underfilling material hardens in a state it is not sufficiently spread out inthe space between the semiconductor chip and the substrate, and whenthere arises a deficiency in the under filling material, the quality ofa resulting semiconductor device decreases.

SUMMARY OF THE INVENTION

The present invention was made in consideration with the abovecircumstances and has as an object thereof to provide a semiconductordevice free from defects caused by fluidity of an under fillingmaterial, a process for producing the same, and an adhesive sheet to beused for producing the semiconductor device.

To attain the above object, according to the present invention, there isprovided an adhesive sheet comprising a base material, an adhesive agentlayer formed on the base material and conductor bodies buried in theadhesive agent layer in an arrangement corresponding to electrodes of asemiconductor integrated circuit and electrodes of a substrate, whereinan adhesive agent constituting the adhesive agent layer has gradableadhesiveness.

The adhesive agent layer preferably has a function as a so-called underfilling material, that is, it is preferable to have a coefficient oflinear expansion close to those of the semiconductor wafer orsemiconductor chip, substrate and conductor bodies when finally hardens.

The adhesive agent which has gradable adhesiveness may have a stage ofexhibiting tackiness (removable adhesiveness) and a stage of exhibitingadhesiveness (a so-called tacky adhesive agent), or may be those whichdo not exhibit any tackiness/adhesiveness in a normal state but exhibitgradable tackiness/adhesiveness by a heat, compression or othertriggers. Due to the gradable adhesiveness of an adhesive agent of theadhesive agent layer, sticking to a semiconductor wafer/chip or asubstrate, remove of a base material, temporary adhesion and actualadhesion of the semiconductor wafer/chip and the substrate can beefficiently performed when producing a semiconductor device.

When the adhesive agent layer is insulative, it is preferable that upperends and/or lower ends of the conductor bodies are substantiallypositioned on the front surface and/or the back surface of the adhesiveagent layer. It is for securely connecting the electrode of thesemiconductor integrated circuit and the electrode of the substrate viathe conductor bodies. However, it is not limited to the above when theadhesive agent layer has anisotropic conductivity. Note that even whenthe above adhesive agent layer is insulative and the conductor bodiesare completely buried in the adhesive agent layer, it is possible toconnect an electrode of the semiconductor integrated circuit and anelectrode of the substrate via the conductor bodies by a pressing in thethickness direction, etc.

The above conductor bodies attached adhesive sheet may be made to be asize corresponding to a semiconductor wafer, and the conductor bodiesmay be arranged so as to correspond to electrodes of a plurality ofsemiconductor integrated circuits formed on the semiconductor wafer.According to the adhesive sheet, a semiconductor device can be producedin a wafer size, thus, production of a semiconductor device at highspeed and at low cost can be attained.

A first process for producing a semiconductor device according to thepresent invention comprises the steps of; sticking a semiconductor chipor a semiconductor wafer and the conductor bodies attached adhesivesheet so that electrodes of a semiconductor integrated circuit formed onthe semiconductor chip or semiconductor wafer and the conductor bodiesof the adhesive sheet can be electrically connected (It does not alwayshave to be connected in this step. It will be same below); removing thebase material from the adhesive agent layer of the conductor bodiesattached adhesive sheet (It naturally includes the meaning of removingthe adhesive agent layer from the base material. It will be same below);and aligning the adhesive agent layer with a substrate so that theconductor bodies buried in the adhesive agent layer and electrodes ofthe substrate can be electrically connected, and adhering thesemiconductor chip or semiconductor wafer and the substrate.

A second process for producing a semiconductor device according to thepresent invention comprises the steps of; sticking a substrate and theconductor bodies attached adhesive sheet so that electrodes of thesubstrate and the conductor bodies of the adhesive sheet can beelectrically connected; removing the base material from the adhesiveagent layer of the conductor bodies attached adhesive sheet; andaligning a semiconductor chip or a semiconductor wafer with the adhesiveagent layer so that electrodes of a semiconductor integrated circuitformed on the semiconductor chip or semiconductor wafer and theconductor bodies buried in the adhesive agent layer can be electricallyconnected, and adhering the substrate and the semiconductor chip orsemiconductor wafer.

A third process for producing a semiconductor device according to thepresent invention comprises the steps of; sticking a semiconductor waferand the conductor bodies attached adhesive sheet so that electrodes of asemiconductor integrated circuit formed on the semiconductor wafer andthe conductor bodies of the adhesive sheet can be electricallyconnected; removing the base material from the adhesive agent layer ofthe conductor bodies attached adhesive sheet; aligning the adhesiveagent layer with a substrate so that the conductor bodies buried in theadhesive agent layer and electrodes of the substrate can be electricallyconnected, and adhering the semiconductor wafer and the substrate; andcutting a laminate obtained by adhering the semiconductor wafer and thesubstrate to obtain a semiconductor device.

A fourth process for producing a semiconductor device comprises thesteps of; sticking a substrate and the conductor bodies attachedadhesive sheet so that electrodes of the substrate and the conductorbodies of the adhesive sheet can be electrically connected; removing thebase material from the adhesive agent layer of the conductor bodiesattached adhesive sheet; aligning a semiconductor wafer with theadhesive agent layer so that electrodes of semiconductor integratedcircuit formed on the semiconductor wafer and the conductor bodiesburied in the adhesive agent layer can be electrically connected, andadhering the substrate and the semiconductor wafer; and cutting alaminate obtained by adhering the substrate and the semiconductor waferto obtain a semiconductor device.

A fifth process for producing a semiconductor device comprises the stepsof; sticking a semiconductor wafer and the conductor bodies attachedadhesive sheet so that electrodes of a semiconductor integrated circuitformed on the semiconductor wafer and the conductor bodies of theadhesive sheet can be electrically connected; cutting the semiconductorwater together with the adhesive agent layer of the conductor bodiesattached adhesive sheet to obtain semiconductor chips; expanding spacesbetween the semiconductor chips if needed; removing the adhesive agentlayer attached semiconductor chip from the base material of theconductor bodies attached adhesive sheet; and aligning the adhesiveagent layer with a substrate so that the conductor bodies buried in theadhesive agent layer and electrodes of the substrate can be electricallyconnected, and adhering the semiconductor chip and the substrate. Theprocess of widening the space between the semiconductor chips may beperformed also by expanding the base material or by expanding othersheet (wafer dicing sheet) adhered on the base material.

The process for producing a semiconductor device may further comprise astep of relatively improving an adhesion force of the adhesive agentlayer to the semiconductor chip, semiconductor wafer or substrate thanan adhesion force of the adhesive agent layer to the base materialbefore the step of removing the base material from the adhesive agentlayer of the conductor bodies attached adhesive sheet. By performing thestep, the base material can be removed from the adhesive agent layerwhile making the adhesive agent layer remained on the semiconductorchip, semiconductor wafer or the substrate.

A first semiconductor device according to the present invention isproduced by the above process. Note that as far as the obtainedsemiconductor device is identical or substantially identical orequivalent to those produced by the above process for producing asemiconductor device, semiconductor devices produced by a differentprocess are also included in the scope of the present invention.

A second semiconductor device according to the present inventioncomprises a semiconductor chip, a substrate adhered to the semiconductorchip via an adhesive agent layer, and conductor bodies for electricallyconnecting electrodes of a semiconductor integrated circuit formed onthe semiconductor chip and electrodes of the substrate in the adhesiveagent layer, wherein the adhesive agent layer is obtained by hardening alayer of an adhesive agent wherein the conductor bodies are buried.

In the present invention, since a conductor bodies is buried in advancein an adhesive agent layer, the adhesive agent layer functions as anunder filling material, so a process of injecting an under fillingmaterial to a space between a semiconductor chip and a substrate becomesunnecessary. Accordingly, defects caused by fluidity of the underfilling material can be prevented in the obtained semiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other objects and features of the present invention willbecome clearer from the following description of the preferredembodiments given with reference to the attached drawings, in which:

FIG. 1 is a schematic cross-sectional view of a conductor bodiesattached adhesive sheet according to an embodiment of the presentinvention;

FIG. 2 is a schematic plane view of a conductor bodies attached adhesivesheet according to the same embodiment;

FIG. 3 is a schematic perspective view of when sticking the conductorbodies attached adhesive sheet according to the same embodiment and asemiconductor wafer;

FIG. 4 is a schematic cross-sectional view of a state where theconductor bodies attached adhesive sheet according to the sameembodiment and a semiconductor wafer are stuck;

FIG. 5 is a schematic cross-sectional view of a state where an adhesiveagent layer of the conductor bodies attached adhesive sheet according tothe same embodiment and a substrate are aligned (furthermore, a statewhere the semiconductor wafer and the substrate are adhered via theadhesive agent layer);

FIG. 6 is a schematic perspective view of when adhering a conductorbodies attached adhesive sheet according to another embodiment of thepresent invention and a semiconductor chip;

FIG. 7 is a schematic cross-sectional view of a conductor bodiesattached adhesive sheet according to another embodiment of the presentinvention; and

FIG. 8 is a schematic cross-sectional view of a state where asemiconductor wafer and a substrate are adhered via the adhesive agentlayer of the conductor bodies attached adhesive sheet according to thesame embodiment.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Below, embodiments of the present invention will be explained.

First Embodiment

FIG. 1 is a schematic cross-sectional view of an adhesive sheetincluding conductor bodies (referred to throughout this specificationalso as a conductor bodies attached adhesive sheet) according to a firstembodiment of the present invention, FIG. 2 is a schematic plane view ofa conductor bodies attached adhesive sheet according to the sameembodiment, FIG. 3 is a schematic perspective view of when sticking theconductor bodies attached adhesive sheet according to the sameembodiment and a semiconductor wafer, FIG. 4 is a schematiccross-sectional view of a state where the conductor bodies attachedadhesive sheet according to the same embodiment and a semiconductorwafer are stuck, and FIG. 5 is a schematic cross-sectional view of astate where an adhesive agent layer of the conductor bodies attachedadhesive sheet according to the same embodiment and a substrate arealigned (furthermore, a state where the semiconductor wafer and thesubstrate are adhered).

Configuration of Conductor Bodies Attached Adhesive Sheet 1

As shown in FIG. 1 and FIG. 2, a conductor bodies attached adhesivesheet 1 according to a first embodiment of the present inventioncomprises a base material 2, an adhesive agent layer 3 formed on thebase material 2, and a plurality of conductor bodies 4 buried in theadhesive agent layer 3. The adhesive agent layer 3 has a same shape asthat of a semiconductor wafer 5 shown in FIG. 3, which is a disk shapebeing formed a cut off portion (orientation flat). Note that the cut offportion may be a notch other than an orientation flat.

As shown in FIG. 1, an upper end of each of the conductor bodies 4 ispositioned on a front surface of the adhesive agent layer 3, and anlower end thereof is positioned on a back surface of the adhesive agentlayer 3. The conductor bodies 4 buried in the adhesive agent layer 3 inthe above way are arranged in a pattern corresponding to an arrangementof electrodes of a plurality of semiconductor integrated circuits formedon the semiconductor wafer 5 (FIG. 2).

Adhesive Agent Layer 3

The adhesive agent layer 3 is comprised of an adhesive agent havinggradable adhesiveness. The adhesive agents which exhibit gradableadhesiveness include those having a stage of tackiness (removableadhesiveness) and a stage of adhesiveness (a so-called tacky adhesiveagent) and also include those which do not exhibit anytackiness/adhesiveness in a normal state but exhibit gradabletackiness/adhesiveness by a heat, compression or other triggers.

The adhesive agent layer 3 preferably has a function as a so-calledunder filling material, that is, it is preferable to have a coefficientof linear expansion close to those of the semiconductor wafer 5 (or asemiconductor chip), substrate 6 and conductor bodies 4 when it finallyhardens.

An adhesive agent (tacky adhesive agent) of the former type may be, forexample, a composition (a) containing a thermosetting resin and a tackycomponent, while an adhesive agent of the latter type may be, forexample, a polyimide type resin (b) and an epoxy type resin (c), etc.The resins or the resin compositions may be used alone, or a materialwherein the resin or the resin composition is used as a matrix can bealso used. Note that a thickness of the adhesive agent layer 3 isnormally determined in accordance with a height of the conductor bodies4.

a. Composition Containing Thermosetting Resin and Tacky Component

In a composition containing a thermosetting resin and an tackycomponent, mainly the thermosetting resin exhibits adhesiveness and thetacky component exhibits tackiness. Examples of the thermosetting resinin such a composition include an epoxy resin, a phenol resin, an urearesin, a melanin resin, an unsaturated polyester resin, a resorcinolresin, a furan resin, a polyurethane resin, a silicone resin etc. Anepoxy resin is preferable among them. On the other hand, examples of thetacky component include an acrylic type adhesive, a rubber typeadhesive, a polyester type adhesive, or thermoplastic resins such aspolyolefin, polyvinyl chloride, polystyrene, thermoplastic polyamide andpolyester. A photopolymerizable composition may be included therein. Assuch a tacky component, a (meth)acrylate copolymer is preferable.

Particularly preferable composition containing a thermoplastic resin anda tacky component is a composition (hereinafter, also referred to as“composition A”) containing a (meth)acrylate copolymer having aweight-average molecular weight of not less than 30000, an epoxy resinhaving a weight-average molecular weight of 100 to 10000, aphotopolymerizable low molecular compound and thermal activation latentepoxy resin curing agent.

The (meth)acrylate copolymer having a weight-average molecular weight ofnot less than 30000 may be a copolymer obtained by copolymerizingmonomers, such as, (meth)acrylic acid, for example, alkyl (meth)acrylatederived from (meth)acrylic acid and alcohol having a carbon number of 1to 14, hydroxyethyl (meth)acrylate, glycidyl (meth)acrylate, etc. Acopolymer of (meth)acrylic acid and/or glycidyl (meth)acrylic acid andat least one kind of alkyl (meth)acrylate is preferable among them.

Examples of alkyl (meth)acrylate derived from (meth)acrylic acid andalcohol having a carbon number of 1 to 14 include methyl (meth)acrylate,ethyl (meth)acrylate, butyl (meth)acrylate, etc.

When using a copolymer derived from (meth)acrylic acid and/or glycidyl(meth)acrylic acid as a (meth)acrylate copolymer, a content of acomponent unit derived from glycidyl (meth)acrylic acid in the copolymeris normally made to be 0 to 80 mol %, preferably 5 to 50 mol %, and acontent of a component unit derived from (meth)acrylic acid is normallymade to be 0 to 40 mol %, preferably 5 to 20 mol %. In this case, asmonomer components other than (meth)acrylic acid and glycidyl(meth)acrylic acid constituting (meth)acrylate copolymer, it ispreferable to use alkyl (meth)acrylate, such as, methyl (meth)acrylate,ethyl (meth)acrylate, butyl (meth)acrylate, etc.

An epoxy resin having a weight-average molecular weight of 100 to 10000may be glycidyl ether of a phenol series, such as, bisphenolA,bisphenolF, resorcinol, phenyl novolac, cresol novolac; glycidyl etherof an alcohol series, such as, butanediol, polyethylene glycol,polypropylene glycol; glycidyl ether of carboxylic acid, such as,phthalic acid, isophthalic acid, tetrahydro phthalic acid; a glycidyltype or alkyl glycidyl type epoxy resin obtained by substituting activehydrogen bonded with nitrogen atom, such as aniline isocyanurate, with aglycidyl group; and so-called alicycle epoxide wherein an epoxy group isintroduced by, for example, oxidizing carbon-carbon double bond inmolecular, such as, vinyl cyclohexene epoxide, 3,4-epoxy cyclohexylmethyl-3,4-dicyclohexane carboxylate, 2-(3,4-epoxy) cyclohexyl-5,5-spiro(3,4-epoxy) cyclohexane-m-dioxane, etc.

An epoxy equivalent weight of the above epoxy resins is preferably 50 to5000 g/eq. The above epoxy resins may be used alone or by combiningdifferent kinds. Among these epoxy resins, bisphenol series glycidyltype epoxy resin, o-cresol novolac type epoxy resin and phenol novolactype epoxy resin are preferably used.

The above epoxy resins are used in an amount of a range of normally 5 to2000 parts by weight, preferably 100 to 1000 parts by weight withrespect to 100 parts by weight of (meth)acrylate copolymer.

A photopolymerizable low molecular compound is a compound able to becrosslinked by being irradiated an energy rays, such as, ultravioletrays, electron rays, etc. As such a compound, oligomer wherein there isat least one photopolymerizable double bond in molecular and aweight-average molecular weight (Mw) is in a range of 100 to 30000,preferably 300 to 10000 may be used.

Example of a photopolymerizable low molecular compound may be urethanemodified acrylate, epoxy modified acrylate, polyester acrylate,polyether acrylate; (meth)acrylic acid oligomer, itaconic acid oligomerand other oligomers having a functional group, such as hydroxy group orcarboxyl group. Epoxy modified acrylate and urethane modified acrylateare preferably used among these.

Note that different points between the above photopolymerizable lowmolecular compound and the above (meth)acrylate copolymer or an epoxyresin are that an upper limit of a weight-average molecular weight ofthe photopolymerizable low molecular compound is 30000 while that of theabove (meth)acrylate copolymer is not less than 30000, and that thephotopolymerizable low molecular compound always has at least onephotopolymerizable double bond in its molecular while the above(meth)acrylate copolymer and epoxy resin normally do not havephotopolymerizable double bond.

The above photopolymerizable low molecular compound is used in an amountof a range of normally 10 to 1000 parts by weight, preferably 50 to 600parts by weight with respect to 100 parts by weight of (meth)acrylatecopolymer.

When using ultraviolet rays for crosslinking the abovephotopolymerizable low molecular compound, it is preferable that aphotopolymerizing initiator is blended in the composition A. Aphotopolymerizing initiator may be benzophenone, acetophenone, benzoin,benzoin alkyl ether, benzil, benzildimethyl ketal, etc. Thesephotopolymerizing initiators maybe used alone or by combining differentkinds. It is preferable to use α-substituted acetophenone among these.

The above photopolymerizing initiator is used in an amount of a range ofnormally 0.1 to 10 parts by weight, preferably 1 to 5 parts by weightwith respect to 100 parts by weight of a photopolymerizable lowmolecular compound.

A thermal activation latent epoxy resin curing agent is a curing agentof a type that does not react with epoxy resins at a room temperaturebut activates by a heat of a certain temperature or more and reacts withepoxy resins. As kinds (divided by activation processes) of thermalactivation latent epoxy resin curing agents, there are those whichgenerate active species (anion, cation) by a chemical reaction due toheating, those which are stably dispersed in an epoxy resin around aroom temperature but become compatible and dissolved in an epoxy resinat a high temperature to start a curing reaction, those which are a typeof curing agent contained in molecular sieves which is released at ahigh temperature to start a curing reaction, and those encapsulatedinamicro-capsule, etc. These thermal activation latent epoxy resincuring agents can be used alone or by combining different kinds, andamong these, it is preferable to use dicyanamide, imidazole compound, ora mixture of the dicyanamide and imidazole compound.

The above thermal activation latent epoxy resin curing agents are usedin an amount of a range of normally 0.1 to 40 parts by weight,preferably 1 to 30 parts by weight with respect to 100 parts by weightof an epoxy resin.

Note that a thermo-curing agent, such as polyisocyanate compound, otherthan the above thermal activation latent epoxy resin curing agents maybe blended so as to change an adhesion ability of the compound A. Thethermo-curing agent is used in an amount of a range of normally 0.1 to30 parts by weight, preferably 5 to 20 parts by weight with respect to100 parts by weight of (meth)acrylate copolymer.

b. Polyimide Type Resin

Examples of a polyimide type resin include a polyimide resin, apolyisoimide resin, maleimide resin, a bismaleimide resin, apolyamide-imide resin, a polyetherimide resin, apoly-imide-isoindoloquinazolinedioneimide resin, etc. These polyimidetype resins may be used alone or by combining different kinds. It ispreferable to use a polyimide resin among these. Furthermore, inpolyimide resins, there are thermoplastic polyimide resins which do nothave a reactive functional group and thermosetting polyimide resinswhich show an imidation reaction by heating. Any of these may be used orthe both may be mixed to be used.

A weight-average molecular weight of polyimide type resins is preferablyabout 10,000 to 1,000,000, particularly about 50,000 to 100,000.

c. Epoxy Type Resin

As an epoxy type resin, those similar to the epoxy resins of the abovecomposition A may be used. The weight-average molecular weight ispreferably about 100 to 100,000.

The above resins or resin compositions may be blended additives, suchas, a leuco dye, an antistatic agent, a coupling agent, an ion scavengerand a copper inhibitor, and other polymers, oligomers and low molecularcompounds, etc.

As a leuco dye, 3-[N-(P-tolylamino)-7-anilinofluoran,4,4′,4″-trisdimethylamino triphenylmethane, etc. may be used, and as anantistatic agent, carbon black, anion type and cation typesurface-active agents, etc. may be used.

Also, other polymers, oligomers and low molecular compounds may be, forexample, a variety of polymers or oligomers, such as, an epoxy resin, anamide resin, an urethane resin, an amide acid resin, a silicone resin,an acrylic resin and acrylic rubber; and nitrogen-contained organiccompounds, such as, triethanolamine, α,ω-(bis3-aminopropyl) polyethyleneglycol ether.

Incidentally, to provide a function of an under filling material to theadhesive agent layer 3, those which have the above linear expansioncoefficient when finally hardened may be selected as an adhesive agentconstituting the adhesive agent layer 3, and it is also possible to makea material have the above linear expansion coefficient when it isfinally hardened by adding an inorganic filler, etc. to the adhesiveagent as a matrix.

An inorganic filler may be a fused silica, crystal silica, almina, boronnitride, aluminum nitride, silicon nitride, magnesia, magnesiumsilicate, etc., and ones being spherical are preferable. A blendingamount and particle diameter of an inorganic filler with respect to amatrix may be suitably adjusted and selected so that the adhesive agentlayer 3 has a desired linear expansion coefficient and is not restrainedin terms of fluidity as in an under filling agent of the related art.

Note that when filling up the above composition A with a lightscattering inorganic filler, such as silica powder and almina powder, aphotopolymerizable low molecular compound in the composition A can beefficiently polymerized by irradiating a light.

Base Material 2

Any material would be basically sufficient as a base material 2 in thepresent embodiment as far as it supports the adhesive agent layer 3 andis able to be removed from the adhesive agent layer 3, and it may alsohave stiffness.

Examples of the base material 2 include films made by resins, such as,polyethylene, polypropylene, polybutene, polybutadiene, vinyl chloride,ionomer, ethylene-methacrylic acid copolymer, polyethyleneterephthalate, polyethylene naphthalate, polybutylene terephthalate,polyimide, polyetherimide, polyaramide, polyetherketone, polyether etherketone, polyphenylene sulfide, poly (4-methylpentene-1),polytetrafluoroethylene, and those obtained by crosslinking theseresins. These films may be used alone or by laminating different kinds.A film thickness thereof is normally about 10 to 300 μm, preferably 20to 150 μm.

Also, other than the above films, papers, such as, a glassine paper,clay coated paper, resin coated paper, a laminated paper (polyethylenelaminated paper, polypropylene laminated paper, etc.) or nonwovenfabrics, metallic foils, etc. may be used.

A surface tension of a surface of the base material 2 on which theadhesive agent layer 3 is formed is preferably not more than 40 dyn/cm.Release treating may be performed on the surface of the base material 2on which the adhesive agent layer 3 is formed to adjust the surfacetension to be a preferable value. Alkyd resin type, silicone resin type,fluorine resin type, unsaturated polyester resin type, polyolefin resintype and wax type releasing agents, etc. may be used for the releasetreating. Note that when the base material 2 itself has the abovesurface tension, the base material 2 can be used as it is without anyrelease treating.

When using the above composition A for the adhesive agent layer 3, it ispreferable to use as the base material 2 a material wherein an energyrays to be irradiated on the composition A can permeate, and it isparticularly preferable to use a material having a low adhesiveness tothe composition A having improved tackiness due to the energy raysirradiation.

On the other hand, when a polyimide type resin or an epoxy type resin isused for the adhesive agent layer 3, it is preferable to use as the basematerial 2 a film made of a heat resistance resin. A fusing point of theheat resistance resin is preferably not less than 230° C., morepreferably 250 to 300° C., and particularly preferably 260 to 280° C.

When producing a semiconductor device by using the present conductorbodies adhesive sheet 1, dicing of a semiconductor wafer can be alsoperformed. In this case, spaces between semiconductor chips may be madewider by expanding the base material 2 after dicing. As the basematerial 2 able to be expanded in this way, it is preferable to select aresin film having a extensible property in the length and widthdirections and a Young's modulus of 1.0×10⁴ kg/cm² or less.

Conductor Bodies 4

The conductor bodies 4 are not particularly limited as far as it isnormally used as bumps (electrodes) in a semiconductor device. As amaterial of the conductor bodies 4, metals or alloys of solder, Au, Cu,Ni, Ag, Pt, etc., resins plated by these metals or alloys, resinswherein conductive powder is dispersed, conductive resins, etc. isnormally selected. In the present embodiment, a shape of the conductorbodies 4 is sphere, but it is not limited to this and may have acolumnar shape, prismatic shape or conical shape, etc. The conductorbodies 4 may be such a shape from the beginning or may be made to be thespheric shape or other shape by being printed a conductive paste.

A height of the conductor bodies 4 is normally 50 to 300 μm, but it maybe less than 50 μm, or furthermore, 30 μm or less. In the presentembodiment, the height of the conductor bodies 4 is the same as thethickness of the adhesive agent layer 3.

Note that a pattern of the conductor bodies 4 in the present embodimentis a pattern corresponding to a so-called area type semiconductor chipon which electrodes are formed all over the chip, but the presentinvention is not limited to this pattern. It may be a patterncorresponding to a so-called peripheral type semiconductor chip whereinelectrodes are formed around the chip.

Production of Conductor Bodies Attached Adhesive Sheet 1

A process for producing the above a conductor bodies attached adhesivesheet 1 is not particularly limited, but generally, after printingconductor bodies 4 by a predetermined pattern on the base material 2, anadhesive agent is coated to form the adhesive agent layer 3 on the basematerial 2. As a printing method of the conductor bodies 4, screenprinting or a process for injecting the conductor bodies 4 by an ink-jetmethod, etc. are applied. On the other hand, as a method of coating theadhesive agent, screen process printing, roll coating, knife coating andmicro-die methods, etc. are applied.

Note that when preparing and coating the above adhesive agent, a solventwherein respective components of the adhesive agent can be uniformlydissolved and dispersed can be also used. The solvent is notparticularly limited as far as it is capable of uniformly dissolving anddispersing the respective components therein. Examples of the solventinclude dimethylformamide, dimethylacetoamide, N-methyl-pyrrolidone,dimethyl sulfoxide, diethylene glycol dimethyl ether, toluene, benzene,xylene, methyl ethyl ketone, tetrahydrofuran, ethyl-cellosolve, dioxane,cyclopentanone, cyclohexanone, monoglyme, etc. These solvents can beused alone or by being mixed with different kinds.

On the other hand, the above conductor bodies attached adhesive sheet 1may be produced by forming the adhesive agent layer 3 by coating anadhesive agent on the base material 2, then burying the conductor bodies4 in the adhesive agent layer 3 in a predetermined pattern. As a methodof burying the conductor bodies 4, a method of pressing one obtained byforming the conductor bodies 4 on a sheet or adsorbing the conductorbodies 4 on a jig in a predetermined pattern and one obtained by formingthe adhesive agent layer 3 on a sheet so as to bury the conductor bodies4 in the adhesive agent layer 3, a method of process injecting theconductor bodies 4 to the adhesive agent layer 3 by an ink-jet method,etc. may be applied.

In any of the above methods, the conductor bodies 4 may be buried in theadhesive agent. In this case, the upper end and the lower end of theconductor bodies 4 may be positioned on the front surface and backsurface of the adhesive agent layer 3 by pressing at the time ofadhering a protective film.

Note that a plurality of adhesive agent layers 3 may be formed by beingset beside each other on one base material 2.

Producing Semiconductor Device

A process for producing a semiconductor device by using the aboveconductor bodies attached adhesive sheet 1 will be explained.

First, as shown in FIG. 3, a semiconductor wafer 5 is put on theadhesive agent layer 3 of the conductor bodies attached adhesive sheet 1and the two are stuck to each other. At this time, as shown in FIG. 4,the semiconductor wafer is aligned so that an electrodes 51 of asemiconductor integrated circuit formed on the semiconductor wafer 5 andthe conductor bodies 4 can be electrically connected, and thesemiconductor wafer 5 and the adhesive agent layer 3 of the conductorbodies attached adhesive sheet 1 are stuck to each other.

Note that in the conductor bodies attached adhesive sheet 1 of thepresent embodiment, since the upper end of the conductor bodies 4 ispositioned at the surface of the adhesive agent layer 3, the electrodes51 of the semiconductor wafer 5 and the conductor bodies 4 can beelectrically connected by sticking the aligned semiconductor wafer 5 tothe adhesive agent layer 3. Incidentally, the electrodes 51 of thesemiconductor wafer 5 may be those called bonding pads or conductorbodies pads, and may be barrier metal formed thereon, furthermore,pillars.

When the adhesive agent layer 3 of the conductor bodies attachedadhesive sheet 1 has tackiness, the above sticking can be attained by anadhesion force of the tackiness. When the adhesive agent layer 3 doesnot have any tackiness, it is preferable to stick the adhesive agentlayer 3 and the semiconductor wafer 5 by hot pressing. The heatingtemperature of the hot pressing is preferably about 30 to 300° C.,particularly preferably about 50 to 200° C., the heating time ispreferably about 1 second to 10 minutes, particularly preferably about 1to 30 seconds, and the pressure is preferably about 1 to 10 kg/cm²,particularly preferably about 1 to 5 kg/cm².

After sticking the semiconductor wafer 5 and the conductor bodiesattached adhesive sheet 1, dicing of the semiconductor wafer 5 may beperformed if needed. At this time, dicing may be performed byadditionally preparing a wafer dicing sheet, removing the base material2 from the conductor bodies attached adhesive sheet 1 and sticking thewafer dicing sheet to the adhesive agent layer 3 of the conductor bodiesattached adhesive sheet 1, or by without using a wafer dicing sheet assuch.

After the above dicing, spaces between semiconductor chips may be madewide by expanding in accordance with need. When the wafer dicing sheetis used, the wafer dicing sheet can be expanded, and even when such awafer dicing sheet is not used, if a base material 2 able to be expandedis used, the base material 2 may be expanded.

Incidentally, when using the above composition A for the adhesive agentlayer 3 of the conductor bodies attached adhesive sheet 1, it ispreferable to irradiate an energy rays from the base material 2 side ofthe conductor bodies attached adhesive sheet 1 to the adhesive agentlayer 3. As the energy rays, ultraviolet rays having a center wavelengthof about 365 nm and electron rays, etc. may be used.

When using ultraviolet rays as the energy rays, normally, theilluminance is set in a range of 20 to 500 mW/cm² and the irradiationtime is set in a range of 0.1 to 150 seconds. Also, for example whenusing electron rays, conditions can be set conforming to the case ofultraviolet rays. Note that heating may be also auxiliary performed atthe time of irradiating the above energy rays.

By irradiating energy rays as such, an adhesion force between thesemiconductor wafer 5 (or a semiconductor chip) and the adhesive agentlayer 3 is normally improved to 50 to 4000 g/25 mm, preferably 100 to3000 g/25 mm. On the other hand, an adhesion force between the adhesiveagent layer 3 and the base material 2 normally declines to 1 to 500 g/25mm, preferably 100 g/25 mm or less.

Then, the base material 2 is removed from the above adhesive agent layer3 of the conductor bodies attached adhesive sheet 1. Incidentally, whenusing the above composition A for the adhesive agent layer 3 of theconductor bodies attached adhesive sheet 1 and the irradiation of anenergy rays is performed as above, the base material 2 can be surelyremoved while leaving the adhesive agent layer 3 fixed on thesemiconductor wafer 5 (or a semiconductor chip) side. Note that theirradiation of the energy rays may be performed before a dicing process.

As shown in FIG. 5, alignment (superimposition) of the semiconductorwafer 5 (or a semiconductor chip) with a substrate 6 is performed sothat electrodes 61 formed on the substrate 6 and conductor bodies 4 areelectrically connected.

Note that since a lower end of the conductor bodies 4 is positioned onthe back surface of the adhesive agent layer 3 in the conductor bodiesattached adhesive sheet 1 of the present embodiment, the conductorbodies 4 and the electrodes 61 of the substrate 6 can be electricallyconnected by the aligning of the semiconductor wafer 5 (or asemiconductor chip).

The semiconductor wafer 5 (or a semiconductor chip) and the substrate 6are adhered via the adhesive agent layer 3. The adhesion process can begenerally performed by heating. The heating is preferably performedduring superimposing the substrate 6 and the semiconductor wafer 5 (or asemiconductor chip) or immediately after the superimposition. At thistime, when the adhesive agent layer 3 does not have any tackiness, atemporary adhesion is preferably performed before an actual adhesion.

A heating temperature of the temporary adhesion is normally 100 to 300°C., preferably 150 to 250° C., a heating time is normally 1 second to 10minutes, preferably 1 to 30 seconds, while a heating temperature of theactual adhesion is normally 100 to 300° C., preferably 150 to 250° C.and a heating time is normally 1 to 120 minutes, preferably 1 to 60minutes. By heating in this way, an adhesive agent of the adhesive agentlayer 3 is fused or hardened so that the semiconductor wafer 5 (or asemiconductor chip) and the substrate 6 are firmly adhered.

During the above heating, the semiconductor wafer 5 (or a semiconductorchip) and the substrate 6 may be pressed to adhere by applying asuitable pressure in the thickness direction of a laminate formed by thesemiconductor wafer 5 (or a semiconductor chip), the adhesive agentlayer 3, and the substrate 6. As a result of the pressing, electrodes 51of the semiconductor wafer 5 (or a semiconductor chip) and the conductorbodies 4 can be surely connected and the conductor bodies 4 and theelectrodes 61 of the substrate 6 can be surely connected. The pressingis particularly efficient in the case where an upper end and/or lowerend of the conductor bodies 4 is not appeared on the surface of theinsulative adhesive agent layer 3 in the conductor bodies attachedadhesive sheet 1.

Incidentally, when a fusing point of the conductor bodies 4 is lowerthan the above heating temperature, for example when the conductorbodies 4 are made of solder balls or a resin, the conductor bodies 4 arefused or soften to deform in some cases.

When the semiconductor wafer 5 is not cut yet, the result obtained byadhering the semiconductor wafer 5 and the substrate 6 may be cut andchipped to be a semiconductor device 7, or those in a wafer size may beused as semiconductor devices 7 without cutting. Cutting can beperformed by a dicing saw and other normal cutting means. Thus cutresults become so-called real chip size package type semiconductordevices.

In the process for producing a semiconductor device as explained above,a conductor bodies attached adhesive sheet 1 was stuck to asemiconductor wafer 5 and then a substrate 6 was adhered thereto, butthe present invention is not limited to this. The conductor bodiesattached adhesive sheet 1 may be adhere to the substrate 6 and then thesemiconductor wafer 5 is adhered thereto.

In the semiconductor device 7 obtained as above, since the conductorbodies 4 are buried in the adhesive agent layer 3 in advance and theadhesive agent layer 3 serves as an under filling material, a process ofinjecting an under filling material to a space between the semiconductorwafer 5 (or a semiconductor chip) and the substrate 6 becomesunnecessary. Accordingly, any defects caused by fluidity of an underfilling material does not exist in thus obtained semiconductor device 7.

[Second Embodiment]

A conductor bodies attached adhesive sheet according to a secondembodiment of the present invention will be explained. FIG. 6 is aschematic perspective view of when sticking the conductor bodiesattached adhesive sheet according to the second embodiment of thepresent invention and a semiconductor chip.

As shown in FIG. 6, a conductor bodies attached adhesive sheet 1Aaccording to the second embodiment comprises, as same as the conductorbodies attached adhesive sheet 1 according to the first embodiment, abase material 2A, an adhesive agent layer 3A formed on the base material2A, and a plurality of conductor bodies 4A buried in the adhesive agentlayer 3A, but differs from the conductor bodies attached adhesive sheet1 according to the first embodiment in the point that the adhesive agentlayer 3A is formed to be a same shape as that of a semiconductor chip52. Note that the conductor bodies 4A buried in the adhesive agent layer3A are arranged in a pattern corresponding to an arrangement ofelectrodes of a semiconductor integrated circuit formed on thesemiconductor chip 52.

The conductor bodies attached adhesive sheet 1A according to the secondembodiment can be produced in a similar process to in the conductorbodies attached adhesive sheet 1 according to the first embodiment, anda plurality of adhesive agent layers 3 may be formed by being set besideeach other on one base material 2A.

Also, in the case of producing a semiconductor device by using theconductor bodies attached adhesive sheet 1A according to the secondembodiment, a semiconductor device can be produced in a similar processto in the conductor bodies attached adhesive sheet 1 according to thefirst embodiment except that a dicing process and a process of cutting aresult obtained by adhering the semiconductor wafer and the substrateare unnecessary.

[Third Embodiment]

A conductor bodies attached adhesive sheet according to a thirdembodiment of the present invention will be explained. FIG. 7 is aschematic sectional view of the conductor bodies attached adhesive sheetaccording to the third embodiment and FIG. 8 is a schematic sectionalview of a state where a semiconductor wafer and a substrate are adheredvia an adhesive agent layer of the conductor bodies attached adhesivesheet according to the third embodiment.

As shown in FIG. 7, a conductor bodies attached adhesive sheet 1Baccording to the third embodiment of the present invention comprises abase material 2B, an adhesive agent layer 3B formed on the base material2B and a plurality of conductor bodies 4B buried in the adhesive agentlayer 3B. An upper end of each of the plurality of conductor bodies 4Bin the present embodiment is positioned lower than a surface of theadhesive agent layer 3B (actually buried in the adhesive agent layer 3B)and a lower end of each of the conductor bodies 4B is positioned on aback surface of the adhesive agent layer 3B. However, the presentinvention is not limited to this and the lower ends of the conductorbodies may positioned upper than the back surface of the adhesive agentlayer 3B and the upper ends thereof may be positioned on the surface ofthe adhesive agent layer 3B. Alternately, the conductor bodies 4B may becompletely buried in the adhesive agent layer 3B.

The adhesive agent layer 3B in the present embodiment has an isotropicconductivity, that is, it exhibits conductivity in the thicknessdirection when being pressed in the thickness direction, but has aninsulation property in the surface direction. For that property,conductive particles 31B are dispersed in an insulative matrix in theadhesive agent layer 3B.

As such conductive particles 31B, particles made of a metal having anexcellent conductivity, such as Ni, Ag, Au, Cu, solder, etc., polymerparticles covered with the metals, or these metal particles or metalcovered particles on which an extremely thin organic insulation layer isformed so as to improve the insulation property in the surface directionmay be used.

To secure the an isotropic conductivity, an average particle diameter ofthe conductive particles 31B is preferably 1 to 100 μm, and a dispersionamount of the conductive particles 31B is preferably 1 to 30 vol % withrespect to the matrix.

The conductor bodies attached adhesive sheet 1B according to the thirdembodiment can be produced in a similar process to in the conductorbodies attached adhesive sheet 1 according to the first embodiment.Also, when producing a semiconductor device by using the conductorbodies attached adhesive sheet 1B according to the third embodiment, itcan be produced in a similar process to in the conductor bodies attachedadhesive sheet 1 according to the first embodiment except for applying asuitable pressure in the thickness direction of the semiconductor wafer5 (or a semiconductor chip) and the adhesive agent layer 3B and lettingconductivity appear in the thickness direction of the adhesive agentlayer 3B.

In a semiconductor device 7B produced by using the conductor bodiesattached adhesive sheet 1B according to the third embodiment, as shownin FIG. 8, electrodes 51 of the semiconductor wafer 5 (or asemiconductor chip) and electrodes 61 of the base material 6 areelectrically connected via the conductor bodies 4B and conductiveparticles 31B.

[Other Embodiment]

The embodiments explained above are described for easier understandingof the present invention and not to limit the present invention.Accordingly, elements disclosed in the above embodiments include alldesign modifications and equivalents belonging to the scope of thepresent invention.

For example, the base materials 2, 2A and 2B may have the same shape asthat of the adhesive agent layers 3, 3A and 3B.

As explained above, according to the present invention, a semiconductorhaving no defects caused by fluidity of an under filling material can beobtained. Namely, the present invention is useful in producing asemiconductor device having no defects caused by fluidity of an underfilling material.

EXAMPLES

Below, the present invention will be explained further in detail byexamples, but the scope of the present invention is not limited to theexamples.

Example 1

Production of Solder Ball Attached Adhesive Sheet (Adhesive Agent:Composition A)

A copolymer having an weight average molecular weight of 900,000 wasprepared by copolymerizing 55 parts by weight of butyl acrylate, 10parts by weight of methylmethacrylate, 20 parts by weight of glycidylmethacrylate and 15 parts by weight of 2-hydroxyethyl acrylate.

A composition A was obtained by mixing 10 parts by weight of the abovecopolymer, 24 parts by weight of liquid bisphenol A type epoxy resin(Epikote 828 produced by Yuka Shell Epoxy Co., Ltd), 10 parts by weightof o-cresol novolac type epoxy resin (EOCN-104S produced by NIPPONKAYAKU Co., Ltd.), 0.05 part by weight ofγ-glycidoxypropyltrimethoxysilane as a coupling agent, 1.5 part byweight of dicyandiamide as a thermal activation latent curing agent, 1.5part by weight of 2-phenyl-4,5-hydroxymethylimidazole, 5 parts by weightof urethane acrylate type oligomer (Seikabeam 14-29B produced byDainichiseika Color & Chemicals Mfg. Co., Ltd.) as a photopolymerizablelow molecular compound, 0.2 part by weight of 1-hydroxycyclohexyl phenylketone as a photopolymerization initiator and 1 part by weight ofaromatic polyisocyanate (Colonate L produced by Nippon PolyurethaneIndustry Co., Ltd.) as a crosslinking agent.

Spheric conductor bodies having a diameter of 200 μm were formed in thesame arrangement of electrodes of a semiconductor integrated circuit byusing as a release film a polyethylene terephthalate (PET) film having athickness of 38 μm, one surface of which was releasing treated by asiliconeresin, and by printing a conductive paste (DW-250H-5 produced byTOYOBO Co., Ltd.) on the releasing treated surface of the release filmby screen printing. After that, the above composition A was coated byscreen printing and dried at 100° C. for 5 minutes to form an adhesiveagent layer, a polyethylene film (thickness: 100 μm, surface tension: 36dyn/cm) was stuck as a base material on the surface of the adhesiveagent layer, and a conductor bodies attached adhesive sheet wherein athickness of an adhesive agent layer was 200 μm was obtained. Theconductor bodies attached adhesive sheet was made to be a wafer form bypunching. Also, a conductor bodies attached adhesive sheet of a chipsize was prepared separately in a similar way.

Example 2

Production of Conductor Bodies Attached Adhesive Sheet (Adhesive Agent:Polyimide Type Resin)

Spheric conductor bodies having a diameter of 200 μm were formed in thesame arrangement of electrodes of a semiconductor integrated circuit byusing as a base material polyethylene naphthalate (PEN) film (thickness:25 μm, surface tension: 34 dyn/cm), one surface of which was releasingtreated by a silicon resin, and by printing a conductive paste(DW-250H-5 produced by TOYOBO Co., Ltd.) on the releasing treatedsurface of the base material by screen printing. After that, atetrahydrofuran solution (solid content: 20 wt %) of thermoplasticpolyimide (Upitite UPA-N221 produced by Ube Industries Ltd.) was coatedto be a wafer shape by screen printing, dried at 90° C. for 5 minutes toform an adhesive agent layer having a thickness of 200 μm. Thus, aconductor bodies attached adhesive sheet was obtained.

Example 3

Production of Conductor Bodies Attached Adhesive Sheet (Adhesive Agent:Epoxy Type Resin Composition)

An epoxy type resin adhesive agent was prepared by mixing 40 parts byweight of a high molecular bisphenol type epoxy resin (Epikote 1010produced by Yuka Shell Epoxy Co., Ltd), 20 parts by weight of amultifunctional cresol novolac type epoxy resin (EOCN-4600 produced byNippon Kayaku Co., Ltd.), 1.5 parts by weight of2-phenyl-4,5-hydroxymethylimidazole as a thermal activation latentcuring agent, and 0.1 part by weight of γ-glycidepropyltrimethoxysilane.

A PET film (thickness: 38 μm, surface tension: 34 dyn/cm), of which onesurface was releasing treated by a silicone resin was used as a basematerial, the above epoxy type resin adhesive agent was coated to be awafer shape by screen printing on the releasing treated surface of thebase material to form an adhesive agent layer. On the other hand,suction was performed from a back surface of a jig having holes in thesame arrangement as that of electrodes of a semiconductor integratedcircuit so as to adsorb solder balls (Pb-63Sn) having a diameter of 200μm as conductor bodies into respective holes to be made aligned. Bystopping the suction after pressing the jig against the above adhesiveagent layer, the conductor bodies were buried in the adhesive agentlayer. Then, the adhesion agent layer was dried at 100° C. for 5 minutesso that a conductor bodies attached adhesion sheet wherein a thicknessof the adhesive agent layer was 200 μm was obtained.

Example 4

Production of Conductor Bodies Attached Adhesive Sheet (Adhesive Agent:Anisotropic Conductive Adhesive Agent)

10 parts by weight of conductive particles (silver particles, averagediameter: 3 μm) were mixed and dispersed to a hundred parts by weight ofthermosetting resin which is obtained by mixing a hundred parts byweight of bisphenol A type epoxy resin (RE-310S produced by NipponKayaku Co., Ltd.), 20 parts by weight of a first curing agent (CureductP-0505 produced by Shikoku Chemicals Corp.) and 10 parts by weight ofsecond curing agent (Cureduct L-01B produced by Shikoku Chemicals Corp.)as an imidazole series adduct type latent curing agent to prepare ananisotropic conductive adhesive agent.

A conductor bodies attached adhesive sheet was prepared in a similar wayto in the example 3 except that the above anisotropic conductiveadhesive agent was used as an adhesive agent.

Example 5

Production of Semiconductor Device (Adhesive Sheet: Example 1)

A conductor bodies attached adhesive sheet in a wafer shape prepared inthe example 1 (wherein an adhesive agent layer was exposed by removing aPET film as a release film. The following will be the same.) and asemiconductor wafer were aligned so that the conductor bodies of theconductor bodies attached adhesive sheet were electrically connected toelectrodes of a semiconductor integrated circuit formed on thesemiconductor wafer, and the conductor bodies attached adhesive sheetwas stuck to the semiconductor wafer. They were fixed to a ring frame.

After irradiating ultraviolet rays (ADWILL RAD-2000m/8 produced byLintec Corporation was used. irradiation conditions: luminance was 340mW/cm², irradiation time was 6 seconds. The following will be in thesame way) to the above adhesive agent layer, full-cut dicing wasperformed up to the adhesive agent layer by using adicing saw (AWD-4000Bproduced by Tokyo Seimitsu Co., Ltd.) and thus obtained adhesive agentlayer attached chip was picked up. After that, conductor bodies of theadhesive agent layer and electrodes of the substrate were aligned. Thechip and substrate were temporarily adhered by heating at 150° C. by 5kg/cm² for 5 seconds, then, furthermore heated at 160° C. for 60 minutesto firmly adhere the chip and substrate via the above adhesive agentlayer so as to obtain a semiconductor device.

Example 6

Production of Semiconductor Device (Adhesive Sheet: Example 2)

A conductor bodies attached adhesive sheet prepared in the example 2 anda semiconductor wafer were aligned so that conductor bodies of theconductor bodies attached adhesive sheet was electrically connected toelectrodes of semiconductor integrated circuit formed on thesemiconductor wafer. The two were hot-pressed at 180° C. by 5 kg/cm² for30 seconds, then, the above conductor bodies attached adhesive sheet wascut along a semiconductor wafer shape.

The PEN film as a base material of the above conductor bodies attachedadhesive sheet was removed from the adhesive agent layer, then aseparately prepared wafer dicing sheet (ADWILL G-11 produced by LintecCorporation) was stuck to the adhesive agent layer, and the adhesiveagent layer attached semiconductor wafer was fixed on a ring frame.

Full-cut dicing was performed up to the above adhesive agent layer byusing a dicing saw (AWD-4000B produced by Tokyo Seimitsu Co., Ltd.), thethus obtained adhesive agent layer attached chip was picked up, then,the conductor bodies of the adhesive agent layer and the electrodes onthe substrate were aligned.

After temporarily adhering the chip and the substrate at 180° C. by 5kg/cm² for 10 seconds, they were furthermore heated at 200° C. for 60minutes to firmly adhere the chip and the substrate via the aboveadhesive agent layer so as to obtain a semiconductor device.

Example 7

Production of Semiconductor Device (Adhesive Sheet: Example 3)

The conductor bodies attached adhesive sheet prepared in the example 3and a semiconductor wafer were aligned so that the conductor bodies ofthe conductor bodies attached adhesive sheet were electrically connectedto electrodes of a semiconductor integrated circuit formed on thesemiconductor wafer. The two were hot-pressed at 140° C. by 5 kg/cm² for30 seconds, then the above conductor bodies attached adhesive sheet wascut along a semiconductor wafer shape.

The PET film as a base material of the above conductor bodies attachedadhesive sheet was removed from the adhesive agent layer, then aseparately prepared wafer dicing sheet (ADWILL G-11 produced by LintecCorporation) was stuck to the adhesive agent layer, and the adhesiveagent layer attached semiconductor wafer was fixed on a ring frame.

Full-cut dicing was performed in a similar way to in the example 6 andthus obtained adhesive agent layer attached chip was picked up. Afterthat, the conductor bodies of the adhesive agent layer and theelectrodes on the substrate were aligned, the chip and the substratewere temporarily adhered by heating at 180° C. by 5 kg/cm² for 5seconds, then furthermore heated at 180° C. for 60 minutes to firmlyadhere the chip and the substrate via the above adhesive agent layer soas to obtain a semiconductor device.

Example 8

Production of Semiconductor Device (Adhesive Sheet: Example 4)

The conductor bodies attached adhesive sheet prepared in the example 4and a semiconductor wafer were aligned so that the conductor bodies ofthe conductor bodies attached adhesive sheet were electrically connectedto electrodes of a semiconductor integrated circuit formed on thesemiconductor wafer. After the two were hot-pressed at 150° C. by 5kg/cm² for 30 seconds, the above conductor bodies attached adhesivesheet was cut along the semiconductor wafer shape.

After that, an adhesive agent layer attached chip was obtained in asimilar way to in the example 7. The conductor bodies of the adhesiveagent layer and the electrodes on the substrates were aligned. The chipand the substrate were temporarily adhered by heating at 150° C. by 5kg/cm² for 5 seconds, then furthermore heated at 180° C. for 60 minutesto firmly adhere the chip and the substrate via the above adhesive agentlayer so as to obtain a semiconductor device.

Example 9

Production of Semiconductor Device (Adhesive Sheet: Example 1)

The conductor bodies attached adhesive sheet in a wafer shape preparedin the example 1 and a semiconductor wafer were aligned so that theconductor bodies of the conductor bodies attached adhesive sheet wereelectrically connected to the electrodes of a semiconductor integratedcircuit formed on the semiconductor wafer, and a conductor bodiesattached adhesive sheet was stuck to the semiconductor wafer.

After irradiating ultraviolet rays to the adhesive agent layer of theabove conductor bodies attached adhesive sheet, a polyethylene film as abase material was removed from the adhesive agent layer and theconductor bodies of the adhesive agent layer and the electrodes on thesubstrate were aligned. After temporarily adhering the semiconductorwafer and the substrate by heating at 150° C. by 5 kg/cm² for 5 seconds,they were furthermore heated at 160° C. for 60 minutes to firmly adherethe semiconductor wafer and the substrate via the above adhesive agentlayer.

A separately prepared ultraviolet ray curing type wafer dicing sheet(ADWILL D-510T produced by Lintec Corporation) was stuck to the abovesubstrate, and the substrate attached semiconductor wafer was fixed tothe ring frame. Then full-cut dicing was performed in a similar way toin the example 6. After ultraviolet rays were irradiated to the aboveultraviolet ray curing type wafer dicing sheet, thus obtained substrateattached chip was picked up so as to obtain a semiconductor device.

Example 10

Production of Semiconductor Device (Adhesive Sheet: Example 1)

The conductor bodies attached adhesive sheet in a wafer shape preparedin the example 1 and a substrate were aligned so that the conductorbodies of the conductor bodies attached adhesive sheet were electricallyconnected to electrodes on the substrate, and the conductor bodiesattached adhesive sheet was stuck to the substrate.

After irradiating ultraviolet rays to the adhesive agent layer of theabove conductor bodies attached adhesive sheet, a polyethylene film as abase material was removed from the adhesive agent layer, and theconductor bodies of the adhesive agent layer and the electrodes of thesemiconductor integrated circuit formed on the semiconductor wafer werealigned. After temporarily adhering the substrate and the semiconductorwafer by heating at 150° C. by 5 kg/cm² for 5 seconds, they were furthermore heated at 160° C. for 60 minutes to firmly adhere the substrate andthe semiconductor wafer via the above adhesive agent layer.

A separately prepared ultraviolet ray curing type wafer dicing sheet(ADWILL D-510T produced by Lintec Co., Ltd.) was stuck to the abovesubstrate, and the substrate attached semiconductor wafer was fixed onthe ring frame. Then full-cut dicing is performed in a similar way to inthe example 6. After ultraviolet rays were irradiated to the aboveultraviolet ray curing type wafer dicing sheet, thus obtained substrateattached chip is picked up so as to obtain a semiconductor device.

Example 11

Production of Semiconductor Device (Adhesive Sheet: Example 1)

The conductor bodies attached adhesive sheet in a wafer shape producedin the example 1 and a substrate were aligned so that the conductorbodies of the conductor bodies attached adhesive sheet were electricallyconnected to the electrodes on the substrate. The conductor bodiesattached adhesive sheet was stuck to the substrate, and the two werefixed on the ring frame.

Full-cut dicing was performed on the adhesive agent layer attachedsubstrate in a similar way to in the example 5. After ultraviolet rayswere irradiated to the adhesive agent layer, a polyethylene film as abase material of the conductor bodies attached adhesive sheet wasexpanded, and an obtained adhesive agent attached substrate was pickedup. After that, conductor bodies of the adhesive agent layer andelectrodes of a separately diced semiconductor chip were aligned. Thesubstrate and the semiconductor chip were temporarily adhered at 150° C.by 5 kg/cm² for 5 seconds, then furthermore heated at 160° C. for 60minutes to firmly adhere the substrate and the semiconductor chip viathe above adhesive agent layer.

Example 12

Production of Semiconductor Device (Adhesive Sheet: Example 1)

The conductor bodies attached adhesive sheet of a chip size prepared inthe example 1 and a separately diced semiconductor chip were aligned sothat the conductor bodies of the conductor bodies attached adhesivesheet were electrically connected to electrodes of the semiconductorchip, and the conductor bodies attached adhesive sheet was stuck to thesemiconductor chip.

After irradiating ultraviolet rays to an adhesive agent layer of theabove conductor bodies attached adhesive sheet, a polyethylene film as abase material was removed from the adhesive agent layer, and theconductor bodies in the adhesive agent layer and the electrodes on thesubstrates were aligned. The semiconductor chip and the substrate weretemporarily adhered at 150° C. by 5 kg/cm² for 5 seconds, then,furthermore heated at 160° C. for 60 minutes to firmly adhere thesemiconductor chip and the substrate via the above adhesive agent layer.

Example 13

Production of Semiconductor Device (Adhesive Sheet: Example 1)

The conductor bodies attached adhesive sheet of a chip size prepared inthe example 1 and a substrate were aligned so that the conductor bodiesof the conductor bodies attached adhesive sheet were electricallyconnected to electrodes on the substrate, and the conductor bodiesattached adhesive sheet was stuck to the substrate.

After irradiating ultraviolet rays to the adhesive agent layer of theabove conductor bodies attached adhesive sheet, a polyethylene film as abase material was removed from the adhesive agent layer, and theconductor bodies of the adhesive agent layer and electrodes of aseparately diced semiconductor chip were aligned. The substrate and thesemiconductor chip were temporarily adhered by heating at 150° C. by 5kg/cm² for 5 seconds, then, furthermore heated at 160° C. for 60 minutesto firmly adhere the substrate and the semiconductor chip via the aboveadhesive agent layer.

Test Example

A Pressure Cooker Test was conducted on the semiconductor devicesobtained in the examples 5 to 13 under conditions of 121° C., 100% RH, 2atmospheres and 168 hours. AS a result, no cracks and the like occurredin any of the semiconductor devices.

1. A semiconductor device comprising: a substrate including substrateelectrodes; a semiconductor integrated circuit adhered to the substrateand including semiconductor integrated circuit electrodes; a hardenedadhesive agent layer formed from an adhesive agent with gradableadhesiveness and having conductor bodies buried therein, the adhesiveagent including a (meth)acrylate copolymer having a weight-averagemolecular weight of not less than 30,000, an epoxy resin having aweight-average molecular weight of 100 to 10,000, a photopolymerizablelow molecular compound and thermal activation latent epoxy resin curingagent, wherein the conductor bodies are connected with the semiconductorintegrated circuit electrodes, and the adhesive agent layer is alignedwith the substrate so that the conductor bodies buried in the adhesiveagent layer and the substrate electrodes are electrically connected. 2.A semiconductor device comprising: a substrate including substrateelectrodes; a semiconductor wafer adhered to the substrate and includingsemiconductor integrated circuits, the semiconductor integrated circuitsincluding semiconductor integrated circuit electrodes; a hardenedadhesive agent layer sized to correspond to the semiconductor wafer,formed from an adhesive agent with gradable adhesiveness, and havingconductor bodies buried therein and arranged to correspond to thesemiconductor integrated circuit electrodes, the adhesive agentincluding a (meth)acrylate copolymer having a weight-average molecularweight of not less than 30,000, an epoxy resin having a weight-averagemolecular weight of 100 to 10,000, a photopolymerizable low molecularcompound and thermal activation latent epoxy resin curing agent. whereinthe conductor bodies are connected to the semiconductor integratedcircuit electrodes, and the adhesive agent layer is aligned with thesubstrate so that the conductor bodies buried in the adhesive agentlayer and the substrate electrodes are electrically connected.
 3. Asemiconductor device configuration comprising: a substrate includingsubstrate electrodes; semiconductor chips adhered to the substrate andeach including a semiconductor integrated circuit and semiconductorintegrated circuit electrodes; an adhesive sheet sized and cut tocorrespond to the semiconductor chips and including an adhesive agentlayer formed from an adhesive agent with gradable adhesiveness, andconductor bodies buried therein and arranged to correspond to thesemiconductor integrated circuit electrodes, the adhesive agentincluding a (meth)acrylate copolymer having a weight-average molecularweight of not less than 30,000, an epoxy resin having a weight-averagemolecular weight of 100 to 10,000, a photopolymerizable low molecularcompound and thermal activation latent epoxy resin curing agent. whereinthe conductor bodies are connected to the semiconductor integratedcircuit electrodes, and the adhesive agent layer is aligned with thesubstrate so that the conductor bodies and the substrate electrodes areelectrically connected.
 4. A semiconductor device comprising: asemiconductor chip including a semiconductor integrated circuit formedthereon; an adhesive agent adhered to one surface of the semiconductorchip; a substrate adhered to the semiconductor chip via the adhesiveagent; wherein the adhesive agent forms a hardened layer with conductorbodies buried therein for electrically connecting electrodes of thesemiconductor integrated circuit formed on the semiconductor chip andelectrodes of the substrate, the hardened layer formed from the adhesiveagent including a (meth)acrylate copolymer having a weight-averagemolecular weight of not less than 30,000, an epoxy resin having aweight-average molecular weight of 100 to 10,000, a photopolymerizablelow molecular compound and thermal activation latent epoxy resin curingagent.